Solid SiC, developed by our unique technology, is a super high purity SiC made by a Chemical Vapor Deposition (CVD) process.
Solid SiC
Features:
- Super High Purity
- Excellent Chemical Resistance
- Very Little Metal Diffusion
- No Outgassing
- Theoretical Density (-SiC)
Applications:
- Wafer Carriers
- Susceptors, Dummy Wafer
- Guide Rings
- Parts for Etching Process
- CVD Process, etc.
Typical Properties
| Density (g/cm³) | Specific Resistance (µΩm) | Flexural Strength (MPa) | Hardness (Vickers) | Young’s Modulus (GPa) |
Thermal Conductivity @RT (W/mK) | C.T.E (RT-1000oC) (x10-6/K) |
| 3.21 | 100 | 590 | 26 | 450 | 250 | 4.0 |
Typical Impurities Analysis
| Al | Ca | Cr | Cu | Fe | K | Na | Ni | Ti | V | |
| ppb | 20 | 16 | 9 | 13 | 31 | 58 | 3 | 6 | 3 | <1 |
